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Dit is de homepagina van Eddy Kunnen ... 4. Formation of deep Via Airgaps for three dimensional wafer to wafer interconnect, US patent 7338896
Dit is de website van Eddy Kunnen, This is the website of Eddy Kunnen
Dry etch challenges in a 20 nm half-pitch single damascene spacer-defined patterning scheme Eddy Kunnen, J. Versluijs, W. Alaerts, Y.K. Siew, H. Struyf, G. Beyer
Eddy Kunnen PESM 2009 9 Changing the lateral to vertical etch rate TiN Lateral etch is completed while significant anisotropic part still needs to be etched Change the lateral to vertical ...
Eddy Kunnen, Denis Shamiryan (IMEC), Annemie Bogaerts (UA) Thiscourse explains why plasma etching is a key technique in the fabrication of microelectronics.
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